Gao, Weibo

Date:   Thursday, Dec. 20, 2018
Time:   15:00
Place:   ETH Zurich, Hönggerberg, HIT F 31.2
Host:    Ataç İmamoğlu

Valley hall effect for MoS2/WSe2 heterostructures

Weibo Gao
Nanyang Technological University, Singapore

Valley hall effect is one of most important phenomenon in 2D material towards valleytronic devices. The demonstration of valley hall effect for electrons (Science 344, 1489-1492 (2014)) and excitons (Nat Mater 16, 1193 (2017)) have triggered great interest in the community. However, they are required to operate only at cryo-temperature. Interlayer excitons bring the possibility to act as better devices due to their much longer valley lifetime and therefore longer transport distance as compared to monolayers. In this talk, we will talk about valley hall effect for eletron/hole as well as interlayer excitons in heterostructures in MoS2/WSe2. The working condition in room temperature together with possibility to electrically control their movement may render interesting valleytronic devices in near future.