Coplanar waveguide resonators integrated into a Si FinFET spin qubit platform

E. Kelly¹, L. Massai¹, N. Hendrickx¹, M. Mergenthaler¹, S. Paredes¹, F. Schupp¹, P. Müller¹, M. Aldeghi¹, N. Vico Trivino¹, A. Kuhlmann², P. Harvey-Collard¹, A. Fuhrer¹, G. Salis<sup>1

1</sup>IBM Research Europe – Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland
²Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

Hole spin qubits in Si finFETs show great promise for a quantum computing platform exhibiting fast and electrical qubit control, even when operated at temperatures above 1 K. High-impedance resonators facilitate dispersive readout of spin qubits and are investigated as a mean to couple spin qubits over larger distances. We have fabricated coplanar waveguide resonators with impedances above 1 kOhm using superconducting NbN and TiN films with kinetic sheet inductance between 70 and 150 pH/square. Coplanar waveguide resonators are attached to a feedline in a hanger-type geometry for multiplexed read-out. We present results on lambda/2 resonators with filtered bias taps that are integrated into our finFET spin qubit platform.